FDS3670 vs PSMN038-100K,518 feature comparison

FDS3670 Rochester Electronics LLC

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PSMN038-100K,518 NXP Semiconductors

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Active Transferred
Ihs Manufacturer ROCHESTER ELECTRONICS LLC NXP SEMICONDUCTORS
Part Package Code SOT SOIC
Package Description SOIC-8 PLASTIC, MS-012, SOP-8
Pin Count 8 8
Reach Compliance Code unknown compliant
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V 100 V
Drain Current-Max (ID) 6.3 A 6.3 A
Drain-source On Resistance-Max 0.03 Ω 0.038 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8 R-PDSO-G8
JESD-609 Code e3 e4
Moisture Sensitivity Level 1 2
Number of Elements 1 1
Number of Terminals 8 8
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Qualification Status COMMERCIAL Not Qualified
Surface Mount YES YES
Terminal Finish MATTE TIN NICKEL PALLADIUM GOLD
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Manufacturer Package Code SOT96-1
ECCN Code EAR99
HTS Code 8541.29.00.75
JEDEC-95 Code MS-012AA
Operating Temperature-Max 150 °C
Power Dissipation-Max (Abs) 3.5 W

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Compare PSMN038-100K,518 with alternatives