FDS6690A-NBNP006
vs
JANTX2N5545
feature comparison
| Pbfree Code |
Yes
|
|
| Part Life Cycle Code |
End Of Life
|
Obsolete
|
| Ihs Manufacturer |
ONSEMI
|
TEMIC SEMICONDUCTORS
|
| Part Package Code |
SO 8L NB
|
|
| Package Description |
SOP-8
|
|
| Manufacturer Package Code |
751EB
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Factory Lead Time |
2 Days
|
|
| Samacsys Manufacturer |
onsemi
|
|
| Avalanche Energy Rating (Eas) |
96 mJ
|
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
30 V
|
|
| Drain Current-Max (ID) |
11 A
|
|
| Drain-source On Resistance-Max |
0.0125 Ω
|
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
JUNCTION
|
| Feedback Cap-Max (Crss) |
115 pF
|
2 pF
|
| JESD-30 Code |
R-PDSO-G8
|
O-MBCY-W6
|
| JESD-609 Code |
e3
|
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
1
|
2
|
| Number of Terminals |
8
|
6
|
| Operating Mode |
ENHANCEMENT MODE
|
DEPLETION MODE
|
| Operating Temperature-Max |
150 °C
|
|
| Operating Temperature-Min |
-55 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
METAL
|
| Package Shape |
RECTANGULAR
|
ROUND
|
| Package Style |
SMALL OUTLINE
|
CYLINDRICAL
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
2.5 W
|
|
| Pulsed Drain Current-Max (IDM) |
50 A
|
|
| Surface Mount |
YES
|
NO
|
| Terminal Finish |
MATTE TIN
|
NOT SPECIFIED
|
| Terminal Form |
GULL WING
|
WIRE
|
| Terminal Position |
DUAL
|
BOTTOM
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
1
|
| Additional Feature |
|
LOW NOISE
|
| JEDEC-95 Code |
|
TO-71
|
| Qualification Status |
|
Not Qualified
|
| Reference Standard |
|
MIL
|
|
|
|
Compare FDS6690A-NBNP006 with alternatives
Compare JANTX2N5545 with alternatives