FDV303N-F169
vs
NVS4409NT1G
feature comparison
Pbfree Code |
Yes
|
Yes
|
Part Life Cycle Code |
End Of Life
|
Active
|
Ihs Manufacturer |
ON SEMICONDUCTOR
|
ONSEMI
|
Package Description |
SOT-23, 3 PIN
|
ROHS COMPLIANT, CASE 419-04, SC-70, 3 PIN
|
Manufacturer Package Code |
318-08
|
419-04
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.21.00.95
|
|
Samacsys Manufacturer |
onsemi
|
onsemi
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
25 V
|
25 V
|
Drain Current-Max (ID) |
0.68 A
|
0.7 A
|
Drain-source On Resistance-Max |
0.45 Ω
|
0.35 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-PDSO-G3
|
R-PDSO-G3
|
Moisture Sensitivity Level |
1
|
1
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Operating Temperature-Min |
-55 °C
|
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
260
|
260
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation Ambient-Max |
0.35 W
|
|
Power Dissipation-Max (Abs) |
0.35 W
|
0.33 W
|
Surface Mount |
YES
|
YES
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
DUAL
|
DUAL
|
Time@Peak Reflow Temperature-Max (s) |
30
|
30
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
Part Package Code |
|
SC-70 (SOT-323) 3 LEAD
|
Pin Count |
|
3
|
Factory Lead Time |
|
21 Weeks
|
Feedback Cap-Max (Crss) |
|
12 pF
|
JESD-609 Code |
|
e3
|
Terminal Finish |
|
Matte Tin (Sn) - annealed
|
|
|
|
Compare FDV303N-F169 with alternatives
Compare NVS4409NT1G with alternatives