FQA8N90C-F109
vs
FQA8N90C_F109
feature comparison
Pbfree Code |
Yes
|
|
Part Life Cycle Code |
End Of Life
|
Obsolete
|
Ihs Manufacturer |
ONSEMI
|
ON SEMICONDUCTOR
|
Part Package Code |
TO-3PN 3L
|
|
Package Description |
TO-3PN, 3 PIN
|
FLANGE MOUNT, R-PSFM-T3
|
Manufacturer Package Code |
340BZ
|
TO3PN03A
|
Reach Compliance Code |
not_compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Samacsys Manufacturer |
onsemi
|
|
Avalanche Energy Rating (Eas) |
850 mJ
|
850 mJ
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
900 V
|
900 V
|
Drain Current-Max (ID) |
8 A
|
8 A
|
Drain-source On Resistance-Max |
1.9 Ω
|
1.9 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-PSFM-T3
|
R-PSFM-T3
|
JESD-609 Code |
e3
|
e3
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
NOT SPECIFIED
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
240 W
|
240 W
|
Pulsed Drain Current-Max (IDM) |
32 A
|
32 A
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
NO
|
NO
|
Terminal Finish |
Matte Tin (Sn)
|
Matte Tin (Sn)
|
Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
Terminal Position |
SINGLE
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
NOT SPECIFIED
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
2
|
2
|
Rohs Code |
|
Yes
|
Factory Lead Time |
|
4 Weeks
|
|
|
|
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