FQD20N06L vs IPD640N06LGBTMA1 feature comparison

FQD20N06L Fairchild Semiconductor Corporation

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IPD640N06LGBTMA1 Infineon Technologies AG

Buy Now Datasheet
Pbfree Code No No
Rohs Code No Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP INFINEON TECHNOLOGIES AG
Part Package Code TO-252 TO-252AA
Package Description SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Pin Count 3 4
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
Additional Feature AVALANCHE RATED, FAST SWITCHING LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
Avalanche Energy Rating (Eas) 170 mJ 43 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 60 V
Drain Current-Max (ID) 17.2 A 18 A
Drain-source On Resistance-Max 0.075 Ω 0.064 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252 TO-252AA
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e0 e3
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 38 W
Pulsed Drain Current-Max (IDM) 68.8 A 72 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish TIN LEAD Tin (Sn)
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Samacsys Manufacturer Infineon
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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Compare IPD640N06LGBTMA1 with alternatives