FQD4N20TM
vs
BSP121
feature comparison
| Pbfree Code |
Yes
|
|
| Part Life Cycle Code |
End Of Life
|
Obsolete
|
| Ihs Manufacturer |
ONSEMI
|
NXP SEMICONDUCTORS
|
| Package Description |
DPAK-3
|
SMALL OUTLINE, R-PDSO-G4
|
| Manufacturer Package Code |
369AS
|
|
| Reach Compliance Code |
not_compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Factory Lead Time |
2 Days
|
|
| Samacsys Manufacturer |
onsemi
|
|
| Avalanche Energy Rating (Eas) |
52 mJ
|
|
| Case Connection |
DRAIN
|
DRAIN
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
200 V
|
200 V
|
| Drain Current-Max (ID) |
3 A
|
0.35 A
|
| Drain-source On Resistance-Max |
1.4 Ω
|
6 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JEDEC-95 Code |
TO-252
|
|
| JESD-30 Code |
R-PSSO-G2
|
R-PDSO-G4
|
| JESD-609 Code |
e3
|
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
4
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
30 W
|
1.5 W
|
| Pulsed Drain Current-Max (IDM) |
12 A
|
1.2 A
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
MATTE TIN
|
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
SINGLE
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
9
|
| Rohs Code |
|
No
|
| Feedback Cap-Max (Crss) |
|
10 pF
|
| Turn-off Time-Max (toff) |
|
20 ns
|
| Turn-on Time-Max (ton) |
|
10 ns
|
|
|
|
Compare FQD4N20TM with alternatives
Compare BSP121 with alternatives