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BSP121 by:

TRANSISTOR 0.35 A, 200 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power

Part Details for BSP121 by NXP Semiconductors

Overview of BSP121 by NXP Semiconductors

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Applications Energy and Power Systems Renewable Energy Automotive

Part Details for BSP121

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BSP121 Part Data Attributes

BSP121 NXP Semiconductors
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BSP121 NXP Semiconductors TRANSISTOR 0.35 A, 200 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS
Package Description SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code unknown
ECCN Code EAR99
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 0.35 A
Drain-source On Resistance-Max 6 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 10 pF
JESD-30 Code R-PDSO-G4
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1.5 W
Pulsed Drain Current-Max (IDM) 1.2 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 20 ns
Turn-on Time-Max (ton) 10 ns

Alternate Parts for BSP121

This table gives cross-reference parts and alternative options found for BSP121. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSP121, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
2SK2430TR Power Field-Effect Transistor, 3A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET ROHM Semiconductor BSP121 vs 2SK2430TR
IRFR222 Power Field-Effect Transistor, 3.8A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Samsung Semiconductor BSP121 vs IRFR222
2SK215 0.5A, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN Renesas Electronics Corporation BSP121 vs 2SK215
FQU5N20TU Power Field-Effect Transistor, 3.8A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3 Fairchild Semiconductor Corporation BSP121 vs FQU5N20TU
2SK1335(S)TL Power Field-Effect Transistor, 3A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Hitachi Ltd BSP121 vs 2SK1335(S)TL
2SK1195 Power Field-Effect Transistor, 1.5A I(D), 230V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, EPACK-3 Shindengen Electronic Manufacturing Co Ltd BSP121 vs 2SK1195
2SK2887 Power Field-Effect Transistor, 3A I(D), 200V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHM Semiconductor BSP121 vs 2SK2887
FQD7N20L Power Field-Effect Transistor, 5.5A I(D), 200V, 0.78ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation BSP121 vs FQD7N20L
2SK214 0.5A, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN Renesas Electronics Corporation BSP121 vs 2SK214
FQD4N20 Power Field-Effect Transistor, 3A I(D), 200V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation BSP121 vs FQD4N20

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