FQD5P20TM vs SI7119DN-T1-GE3 feature comparison

FQD5P20TM Fairchild Semiconductor Corporation

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SI7119DN-T1-GE3 Vishay Intertechnologies

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Transferred Active
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP VISHAY INTERTECHNOLOGY INC
Part Package Code DPAK
Package Description ROHS COMPLIANT, DPAK-3 HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8
Pin Count 3
Manufacturer Package Code TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 330 mJ 1.25 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V 200 V
Drain Current-Max (ID) 3.7 A 1.2 A
Drain-source On Resistance-Max 1.4 Ω 1.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2 S-XDSO-C5
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 2 5
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY UNSPECIFIED
Package Shape RECTANGULAR SQUARE
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type P-CHANNEL P-CHANNEL
Power Dissipation-Max (Abs) 45 W 52 W
Pulsed Drain Current-Max (IDM) 14.8 A 5 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish MATTE TIN Matte Tin (Sn) - annealed
Terminal Form GULL WING C BEND
Terminal Position SINGLE DUAL
Time@Peak Reflow Temperature-Max (s) 30 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 3 2
Factory Lead Time 9 Weeks
Samacsys Manufacturer Vishay

Compare FQD5P20TM with alternatives

Compare SI7119DN-T1-GE3 with alternatives