FQI4N80TU
vs
FQI4N80TU
feature comparison
| Pbfree Code |
Yes
|
Yes
|
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Transferred
|
End Of Life
|
| Ihs Manufacturer |
FAIRCHILD SEMICONDUCTOR CORP
|
ONSEMI
|
| Part Package Code |
TO-262
|
|
| Package Description |
I2PAK-3
|
I2PAK-3
|
| Pin Count |
3
|
|
| Manufacturer Package Code |
3LD, TO262, JEDEC VARIATION AA (I2PAK)
|
418AV
|
| Reach Compliance Code |
not_compliant
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.29.00.95
|
|
| Avalanche Energy Rating (Eas) |
460 mJ
|
460 mJ
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
800 V
|
800 V
|
| Drain Current-Max (ID) |
3.9 A
|
3.9 A
|
| Drain-source On Resistance-Max |
3.6 Ω
|
3.6 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JEDEC-95 Code |
TO-262AA
|
TO-262AA
|
| JESD-30 Code |
R-PSIP-T3
|
R-PSIP-T3
|
| JESD-609 Code |
e3
|
e3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
IN-LINE
|
IN-LINE
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
130 W
|
130 W
|
| Pulsed Drain Current-Max (IDM) |
15.6 A
|
15.6 A
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
MATTE TIN
|
MATTE TIN
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
1
|
| Factory Lead Time |
|
4 Weeks
|
| Samacsys Manufacturer |
|
onsemi
|
|
|
|
Compare FQI4N80TU with alternatives
Compare FQI4N80TU with alternatives