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Transistors Power Field-Effect Transistors FQI4N80TU

FQI4N80TU
Description: Power MOSFET, N-Channel, QFET®, 800 V, 3.9 A, 3.6 Ω, I2PAK, 1000-TUBE

Overview of FQI4N80TU by onsemi

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for FQI4N80TU by onsemi

Part # Manufacturer Description Stock Price Buy
DISTI # 82C4155
Newark Transistor, mosfet, n-Channel,800V V(Br)Dss,3.9A I(D),to-262Aa Rohs Compliant: Yes |Onsemi FQI4N80TU RoHS: Compliant Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1,000 $1.1500
  • 2,500 $0.9270
  • 5,000 $0.8990
$0.8990 / $1.1500 Buy Now
DISTI # FQI4N80TU
Avnet Americas Trans MOSFET N-CH 800V 3.9A 3-Pin(3+Tab) I2PAK Rail - Rail/Tube (Alt: FQI4N80TU) RoHS: Compliant Min Qty: 345 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Tube 1550 Partner Stock
  • 345 $1.0746
  • 350 $1.0456
  • 700 $1.0165
  • 1,800 $0.9875
  • 3,500 $0.9585
  • 18,000 $0.9294
  • 35,000 $0.9004
$0.9004 / $1.0746 Buy Now
DISTI # FQI4N80TU
TME Transistor: N-MOSFET, unipolar, 800V, 2.47A, Idm: 15.6A, 130W, I2PAK Min Qty: 1 0
  • 1 $1.8400
  • 3 $1.6400
  • 10 $1.4500
  • 50 $1.3000
  • 250 $1.2200
$1.2200 / $1.8400 RFQ
Flip Electronics Stock, ship today 3000
RFQ

CAD Models for FQI4N80TU by onsemi
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Part Data Attributes for FQI4N80TU by onsemi
Parametric Data

FQI4N80TU
onsemi
Buy Now
-
-
Pbfree Code
Yes
Part Life Cycle Code
End Of Life
Ihs Manufacturer
ONSEMI
Package Description
I2PAK-3
Manufacturer Package Code
418AV
Reach Compliance Code
not_compliant
ECCN Code
EAR99
Factory Lead Time
4 Weeks
Samacsys Manufacturer
onsemi
Avalanche Energy Rating (Eas)
460 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
800 V
Drain Current-Max (ID)
3.9 A
Drain-source On Resistance-Max
3.6 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-262AA
JESD-30 Code
R-PSIP-T3
JESD-609 Code
e3
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
IN-LINE
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
130 W
Pulsed Drain Current-Max (IDM)
15.6 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
MATTE TIN
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. FQI4N80TU
    onsemi
    Power MOSFET, N-Channel, QFET®, 800 V, 3.9 A, 3.6 Ω, I2PAK, 1000-TUBE
    VS

Alternate Parts for FQI4N80TU

This table gives cross-reference parts and alternative options found for FQI4N80TU. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQI4N80TU, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
FQI4N80 Power Field-Effect Transistor, 3.9A I(D), 800V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3 Fairchild Semiconductor Corporation FQI4N80TU vs FQI4N80
FQI4N80TU N-Channel QFET® MOSFET 800V, 3.9A, 3.6Ω, 3LD, TO262, JEDEC VARIATION AA (I2PAK), 1000/RAIL Fairchild Semiconductor Corporation FQI4N80TU vs FQI4N80TU
Part Number Description Manufacturer Compare
FQI4N80 Power Field-Effect Transistor, 3.9A I(D), 800V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3 Fairchild Semiconductor Corporation FQI4N80TU vs FQI4N80
FQI4N80TU N-Channel QFET® MOSFET 800V, 3.9A, 3.6Ω, 3LD, TO262, JEDEC VARIATION AA (I2PAK), 1000/RAIL Fairchild Semiconductor Corporation FQI4N80TU vs FQI4N80TU

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