GL41G
vs
JANTXV1N648-1
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
INTERNATIONAL SEMICONDUCTOR INC
|
MICROSEMI CORP
|
| Part Package Code |
DO-213AB
|
|
| Package Description |
DO-213AB, 2 PIN
|
O-LALF-W2
|
| Pin Count |
2
|
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.80
|
8541.10.00.70
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| JEDEC-95 Code |
DO-213AB
|
DO-35
|
| JESD-30 Code |
O-LELF-R2
|
O-LALF-W2
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Output Current-Max |
1 A
|
0.4 A
|
| Package Body Material |
GLASS
|
GLASS
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Rep Pk Reverse Voltage-Max |
400 V
|
500 V
|
| Reverse Recovery Time-Max |
0.05 µs
|
|
| Surface Mount |
YES
|
NO
|
| Terminal Form |
WRAP AROUND
|
WIRE
|
| Terminal Position |
END
|
AXIAL
|
| Base Number Matches |
3
|
1
|
| Additional Feature |
|
HIGH RELIABILITY
|
| Application |
|
GENERAL PURPOSE
|
| JESD-609 Code |
|
e0
|
| Number of Phases |
|
1
|
| Operating Temperature-Max |
|
175 °C
|
| Operating Temperature-Min |
|
-65 °C
|
| Power Dissipation-Max |
|
0.6 W
|
| Reference Standard |
|
MIL-S-19500
|
| Terminal Finish |
|
TIN LEAD
|
|
|
|
Compare GL41G with alternatives
Compare JANTXV1N648-1 with alternatives