GP10M vs 1N4007G_HF feature comparison

GP10M EIC Semiconductor Inc

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1N4007G_HF Diodes Incorporated

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer EIC SEMICONDUCTOR CO LTD DIODES INC
Reach Compliance Code compliant not_compliant
ECCN Code EAR99
HTS Code 8541.10.00.80
Additional Feature HIGH RELIABILITY
Application GENERAL PURPOSE GENERAL PURPOSE
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.2 V 1.1 V
JEDEC-95 Code DO-41 DO-41
JESD-30 Code O-PALF-W2 O-PALF-W2
Non-rep Pk Forward Current-Max 30 A 30 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 150 °C
Operating Temperature-Min -65 °C -55 °C
Output Current-Max 1 A 1 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Reference Standard TS-16949
Rep Pk Reverse Voltage-Max 1000 V 1000 V
Reverse Current-Max 5 µA 5 µA
Reverse Recovery Time-Max 3 µs
Reverse Test Voltage 1000 V 1000 V
Surface Mount NO NO
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 2 1
Samacsys Manufacturer Diodes Incorporated
JESD-609 Code e3
Peak Reflow Temperature (Cel) 260
Terminal Finish BRIGHT TIN

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