GP30G vs EGP30GZ feature comparison

GP30G Taitron Components Inc

Buy Now Datasheet

EGP30GZ Galaxy Microelectronics

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Contact Manufacturer
Ihs Manufacturer TAITRON COMPONENTS INC CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Application GENERAL PURPOSE EFFICIENCY
Breakdown Voltage-Min 400 V
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1 V 1.25 V
JEDEC-95 Code DO-201AD DO-27
JESD-30 Code O-PALF-W2 O-PALF-W2
Non-rep Pk Forward Current-Max 125 A 125 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 150 °C
Operating Temperature-Min -65 °C -55 °C
Output Current-Max 3 A 3 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Rep Pk Reverse Voltage-Max 400 V 400 V
Reverse Current-Max 5 µA 5 µA
Reverse Test Voltage 400 V
Surface Mount NO NO
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 3 1
Package Description O-PALF-W2
Peak Reflow Temperature (Cel) 260
Reverse Recovery Time-Max 0.05 µs

Compare GP30G with alternatives

Compare EGP30GZ with alternatives