GS1B vs S1B feature comparison

GS1B Sangdest Microelectronics (Nanjing) Co Ltd

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S1B Taiwan Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code compliant not_compliant
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
JEDEC-95 Code DO-214AC DO-214AC
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e0 e3
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Output Current-Max 1 A 1 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 100 V 100 V
Reverse Recovery Time-Max 2.5 µs 1.5 µs
Surface Mount YES YES
Terminal Finish TIN LEAD MATTE TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 4 382
ECCN Code EAR99
HTS Code 8541.10.00.80
Factory Lead Time 4 Weeks
Samacsys Manufacturer Taiwan Semiconductor
Forward Voltage-Max (VF) 1.1 V
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 30 A
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Peak Reflow Temperature (Cel) 260
Reference Standard UL RECOGNIZED
Time@Peak Reflow Temperature-Max (s) 30

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