GS66502B-E01-MR
vs
GS66502B-TR
feature comparison
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Obsolete
|
Contact Manufacturer
|
Ihs Manufacturer |
GAN SYSTEMS INC
|
GAN SYSTEMS INC
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Samacsys Manufacturer |
GaN Systems
|
GaN Systems
|
Case Connection |
SOURCE
|
SOURCE
|
Configuration |
SINGLE
|
SINGLE
|
DS Breakdown Voltage-Min |
650 V
|
650 V
|
Drain Current-Max (ID) |
7.5 A
|
7.5 A
|
Drain-source On Resistance-Max |
0.26 Ω
|
0.26 Ω
|
FET Technology |
HIGH ELECTRON MOBILITY
|
HIGH ELECTRON MOBILITY
|
Feedback Cap-Max (Crss) |
0.5 pF
|
0.5 pF
|
JESD-30 Code |
R-PBCC-N3
|
R-PBCC-N3
|
JESD-609 Code |
e4
|
e4
|
Moisture Sensitivity Level |
3
|
3
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Operating Temperature-Min |
-55 °C
|
-55 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
CHIP CARRIER
|
CHIP CARRIER
|
Peak Reflow Temperature (Cel) |
260
|
260
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
15 A
|
15 A
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
GOLD OVER NICKEL
|
GOLD OVER NICKEL
|
Terminal Form |
NO LEAD
|
NO LEAD
|
Terminal Position |
BOTTOM
|
BOTTOM
|
Time@Peak Reflow Temperature-Max (s) |
30
|
30
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
GALLIUM NITRIDE
|
GALLIUM NITRIDE
|
Base Number Matches |
1
|
1
|
|
|
|
Compare GS66502B-E01-MR with alternatives
Compare GS66502B-TR with alternatives