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Power Field-Effect Transistor, 7.5A I(D), 650V, 0.26ohm, 1-Element, N-Channel, Gallium Nitride, High Electron Mobility FET,
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GS66502B-E01-MR
GaN Systems
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Datasheet
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GS66502B-E01-MR
GaN Systems
Power Field-Effect Transistor, 7.5A I(D), 650V, 0.26ohm, 1-Element, N-Channel, Gallium Nitride, High Electron Mobility FET,
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | GAN SYSTEMS INC | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | GaN Systems | |
Case Connection | SOURCE | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 650 V | |
Drain Current-Max (ID) | 7.5 A | |
Drain-source On Resistance-Max | 0.26 Ω | |
FET Technology | HIGH ELECTRON MOBILITY | |
Feedback Cap-Max (Crss) | 0.5 pF | |
JESD-30 Code | R-PBCC-N3 | |
JESD-609 Code | e4 | |
Moisture Sensitivity Level | 3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | CHIP CARRIER | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 15 A | |
Surface Mount | YES | |
Terminal Finish | GOLD OVER NICKEL | |
Terminal Form | NO LEAD | |
Terminal Position | BOTTOM | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | GALLIUM NITRIDE |
This table gives cross-reference parts and alternative options found for GS66502B-E01-MR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of GS66502B-E01-MR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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GS66502B-TR | Power Field-Effect Transistor, 7.5A I(D), 650V, 0.26ohm, 1-Element, N-Channel, Gallium Nitride, High Electron Mobility FET, | GaN Systems | GS66502B-E01-MR vs GS66502B-TR |