GS66502B-TR
vs
GS66502B-E01-MR
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Contact Manufacturer
|
Obsolete
|
| Ihs Manufacturer |
GAN SYSTEMS INC
|
GAN SYSTEMS INC
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Samacsys Manufacturer |
GaN Systems
|
GaN Systems
|
| Case Connection |
SOURCE
|
SOURCE
|
| Configuration |
SINGLE
|
SINGLE
|
| DS Breakdown Voltage-Min |
650 V
|
650 V
|
| Drain Current-Max (ID) |
7.5 A
|
7.5 A
|
| Drain-source On Resistance-Max |
0.26 Ω
|
0.26 Ω
|
| FET Technology |
HIGH ELECTRON MOBILITY
|
HIGH ELECTRON MOBILITY
|
| Feedback Cap-Max (Crss) |
0.5 pF
|
0.5 pF
|
| JESD-30 Code |
R-PBCC-N3
|
R-PBCC-N3
|
| JESD-609 Code |
e4
|
e4
|
| Moisture Sensitivity Level |
3
|
3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Operating Temperature-Min |
-55 °C
|
-55 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
CHIP CARRIER
|
CHIP CARRIER
|
| Peak Reflow Temperature (Cel) |
260
|
260
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
15 A
|
15 A
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
GOLD OVER NICKEL
|
GOLD OVER NICKEL
|
| Terminal Form |
NO LEAD
|
NO LEAD
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
30
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
GALLIUM NITRIDE
|
GALLIUM NITRIDE
|
| Base Number Matches |
1
|
1
|
|
|
|
Compare GS66502B-TR with alternatives
Compare GS66502B-E01-MR with alternatives