GS8342T36AE-250
vs
K7I323682M-FC250
feature comparison
| Pbfree Code |
No
|
|
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
GSI TECHNOLOGY
|
SAMSUNG SEMICONDUCTOR INC
|
| Part Package Code |
BGA
|
BGA
|
| Package Description |
LBGA,
|
LBGA,
|
| Pin Count |
165
|
165
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
3A991.B.2.A
|
3A991.B.2.A
|
| HTS Code |
8542.32.00.41
|
8542.32.00.41
|
| Access Time-Max |
0.45 ns
|
0.45 ns
|
| Additional Feature |
PIPELINED ARCHITECTURE
|
PIPELINED ARCHITECTURE
|
| JESD-30 Code |
R-PBGA-B165
|
R-PBGA-B165
|
| Length |
17 mm
|
17 mm
|
| Memory Density |
37748736 bit
|
37748736 bit
|
| Memory IC Type |
DDR SRAM
|
DDR SRAM
|
| Memory Width |
36
|
36
|
| Number of Functions |
1
|
1
|
| Number of Terminals |
165
|
165
|
| Number of Words |
1048576 words
|
1048576 words
|
| Number of Words Code |
1000000
|
1000000
|
| Operating Mode |
SYNCHRONOUS
|
SYNCHRONOUS
|
| Operating Temperature-Max |
70 °C
|
70 °C
|
| Operating Temperature-Min |
|
|
| Organization |
1MX36
|
1MX36
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Code |
LBGA
|
LBGA
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
GRID ARRAY, LOW PROFILE
|
GRID ARRAY, LOW PROFILE
|
| Parallel/Serial |
PARALLEL
|
PARALLEL
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Seated Height-Max |
1.5 mm
|
1.4 mm
|
| Supply Voltage-Max (Vsup) |
1.9 V
|
1.9 V
|
| Supply Voltage-Min (Vsup) |
1.7 V
|
1.7 V
|
| Supply Voltage-Nom (Vsup) |
1.8 V
|
1.8 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
COMMERCIAL
|
COMMERCIAL
|
| Terminal Form |
BALL
|
BALL
|
| Terminal Pitch |
1 mm
|
1 mm
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Width |
15 mm
|
15 mm
|
| Base Number Matches |
1
|
1
|
|
|
|
Compare GS8342T36AE-250 with alternatives
Compare K7I323682M-FC250 with alternatives