HAT1020R
vs
NTMD6N02R2
feature comparison
| Part Life Cycle Code |
Transferred
|
Active
|
| Ihs Manufacturer |
HITACHI LTD
|
ROCHESTER ELECTRONICS LLC
|
| Part Package Code |
SOIC
|
SOT
|
| Package Description |
FP-8DA, SOP-8
|
CASE 751-07, SO-8
|
| Pin Count |
8
|
8
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
30 V
|
20 V
|
| Drain Current-Max (ID) |
5 A
|
3.92 A
|
| Drain-source On Resistance-Max |
0.13 Ω
|
0.035 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JEDEC-95 Code |
MS-012AA
|
|
| JESD-30 Code |
R-PDSO-G8
|
R-PDSO-G8
|
| Number of Elements |
1
|
2
|
| Number of Terminals |
8
|
8
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Polarity/Channel Type |
P-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
2.5 W
|
|
| Pulsed Drain Current-Max (IDM) |
40 A
|
30 A
|
| Qualification Status |
Not Qualified
|
COMMERCIAL
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
2
|
2
|
| Pbfree Code |
|
Yes
|
| Rohs Code |
|
No
|
| Manufacturer Package Code |
|
CASE 751-07
|
| Additional Feature |
|
LOGIC LEVEL COMPATIBLE
|
| Avalanche Energy Rating (Eas) |
|
360 mJ
|
| JESD-609 Code |
|
e0
|
| Moisture Sensitivity Level |
|
NOT SPECIFIED
|
| Peak Reflow Temperature (Cel) |
|
240
|
| Terminal Finish |
|
TIN LEAD
|
| Time@Peak Reflow Temperature-Max (s) |
|
30
|
|
|
|
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