HAT1026R vs HAT1038RJ feature comparison

HAT1026R Renesas Electronics Corporation

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HAT1038RJ Hitachi Ltd

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Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer RENESAS ELECTRONICS CORP HITACHI LTD
Part Package Code SOIC SOIC
Package Description SMALL OUTLINE, R-PDSO-G8 SMALL OUTLINE, R-PDSO-G8
Pin Count 8 8
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Configuration SINGLE WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V 60 V
Drain Current-Max (ID) 7 A 3.5 A
Drain-source On Resistance-Max 0.065 Ω 0.23 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA MS-012AA
JESD-30 Code R-PDSO-G8 R-PDSO-G8
Number of Elements 1 2
Number of Terminals 8 8
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type P-CHANNEL P-CHANNEL
Power Dissipation-Max (Abs) 2.5 W 4 W
Pulsed Drain Current-Max (IDM) 56 A 28 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 2

Compare HAT1026R with alternatives

Compare HAT1038RJ with alternatives