HAT1026R
vs
HAT1038RJ
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Transferred
Ihs Manufacturer
RENESAS ELECTRONICS CORP
HITACHI LTD
Part Package Code
SOIC
SOIC
Package Description
SMALL OUTLINE, R-PDSO-G8
SMALL OUTLINE, R-PDSO-G8
Pin Count
8
8
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Configuration
SINGLE WITH BUILT-IN DIODE
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
30 V
60 V
Drain Current-Max (ID)
7 A
3.5 A
Drain-source On Resistance-Max
0.065 Ω
0.23 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
MS-012AA
MS-012AA
JESD-30 Code
R-PDSO-G8
R-PDSO-G8
Number of Elements
1
2
Number of Terminals
8
8
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
P-CHANNEL
P-CHANNEL
Power Dissipation-Max (Abs)
2.5 W
4 W
Pulsed Drain Current-Max (IDM)
56 A
28 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
2
Compare HAT1026R with alternatives
Compare HAT1038RJ with alternatives