HAT1026R vs NDS8934 feature comparison

HAT1026R Renesas Electronics Corporation

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NDS8934 Texas Instruments

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Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer RENESAS ELECTRONICS CORP NATIONAL SEMICONDUCTOR CORP
Part Package Code SOIC
Package Description SMALL OUTLINE, R-PDSO-G8 SMALL OUTLINE, R-PDSO-G8
Pin Count 8
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Configuration SINGLE WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V 20 V
Drain Current-Max (ID) 7 A 3.8 A
Drain-source On Resistance-Max 0.065 Ω 0.07 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8 R-PDSO-G8
Number of Elements 1 2
Number of Terminals 8 8
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type P-CHANNEL P-CHANNEL
Power Dissipation-Max (Abs) 2.5 W 2 W
Pulsed Drain Current-Max (IDM) 56 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 4
Rohs Code No
HTS Code 8541.29.00.95
JESD-609 Code e0
Power Dissipation Ambient-Max 2 W
Terminal Finish Tin/Lead (Sn/Pb)

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