HGT1S15N120C3S vs HGT1S12N60B3 feature comparison

HGT1S15N120C3S Rochester Electronics LLC

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HGT1S12N60B3 Harris Semiconductor

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Part Life Cycle Code Active Obsolete
Ihs Manufacturer ROCHESTER ELECTRONICS LLC HARRIS SEMICONDUCTOR
Reach Compliance Code unknown unknown
Case Connection COLLECTOR COLLECTOR
Collector Current-Max (IC) 35 A 27 A
Collector-Emitter Voltage-Max 1200 V 600 V
Configuration SINGLE SINGLE
JEDEC-95 Code TO-263AB TO-262AA
JESD-30 Code R-PSSO-G2 R-PSIP-T3
Number of Elements 1 1
Number of Terminals 2 3
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE IN-LINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Qualification Status COMMERCIAL Not Qualified
Surface Mount YES NO
Terminal Form GULL WING THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application MOTOR CONTROL MOTOR CONTROL
Transistor Element Material SILICON SILICON
Turn-off Time-Nom (toff) 820 ns 280 ns
Turn-on Time-Nom (ton) 42 ns 22 ns
Base Number Matches 3 3
Rohs Code No
Package Description PLASTIC PACKAGE-3
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS, ULTRA FAST SWITCHING
Fall Time-Max (tf) 175 ns
Gate-Emitter Thr Voltage-Max 6 V
Gate-Emitter Voltage-Max 20 V
JESD-609 Code e0
Operating Temperature-Max 150 °C
Power Dissipation-Max (Abs) 104 W
Terminal Finish TIN LEAD

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