HGT1S15N120C3S
vs
HGT1S12N60B3
feature comparison
Part Life Cycle Code |
Active
|
Obsolete
|
Ihs Manufacturer |
ROCHESTER ELECTRONICS LLC
|
HARRIS SEMICONDUCTOR
|
Reach Compliance Code |
unknown
|
unknown
|
Case Connection |
COLLECTOR
|
COLLECTOR
|
Collector Current-Max (IC) |
35 A
|
27 A
|
Collector-Emitter Voltage-Max |
1200 V
|
600 V
|
Configuration |
SINGLE
|
SINGLE
|
JEDEC-95 Code |
TO-263AB
|
TO-262AA
|
JESD-30 Code |
R-PSSO-G2
|
R-PSIP-T3
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
3
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
IN-LINE
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Qualification Status |
COMMERCIAL
|
Not Qualified
|
Surface Mount |
YES
|
NO
|
Terminal Form |
GULL WING
|
THROUGH-HOLE
|
Terminal Position |
SINGLE
|
SINGLE
|
Transistor Application |
MOTOR CONTROL
|
MOTOR CONTROL
|
Transistor Element Material |
SILICON
|
SILICON
|
Turn-off Time-Nom (toff) |
820 ns
|
280 ns
|
Turn-on Time-Nom (ton) |
42 ns
|
22 ns
|
Base Number Matches |
3
|
3
|
Rohs Code |
|
No
|
Package Description |
|
PLASTIC PACKAGE-3
|
ECCN Code |
|
EAR99
|
Additional Feature |
|
LOW CONDUCTION LOSS, ULTRA FAST SWITCHING
|
Fall Time-Max (tf) |
|
175 ns
|
Gate-Emitter Thr Voltage-Max |
|
6 V
|
Gate-Emitter Voltage-Max |
|
20 V
|
JESD-609 Code |
|
e0
|
Operating Temperature-Max |
|
150 °C
|
Power Dissipation-Max (Abs) |
|
104 W
|
Terminal Finish |
|
TIN LEAD
|
|
|
|
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