HGT1S5N120BNS9A
vs
IRG4BC30KDPBF
feature comparison
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
FAIRCHILD SEMICONDUCTOR CORP
|
INFINEON TECHNOLOGIES AG
|
| Package Description |
SMALL OUTLINE, R-PSSO-G2
|
LEAD FREE, PLASTIC PACKAGE-3
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Additional Feature |
LOW CONDUCTION LOSS, AVALANCHE RATED
|
LOW CONDUCTION LOSS
|
| Case Connection |
COLLECTOR
|
COLLECTOR
|
| Collector Current-Max (IC) |
21 A
|
28 A
|
| Collector-Emitter Voltage-Max |
1200 V
|
600 V
|
| Configuration |
SINGLE
|
SINGLE
|
| Fall Time-Max (tf) |
200 ns
|
120 ns
|
| Gate-Emitter Voltage-Max |
20 V
|
20 V
|
| JEDEC-95 Code |
TO-263AB
|
TO-220AB
|
| JESD-30 Code |
R-PSSO-G2
|
R-PSFM-T3
|
| JESD-609 Code |
e0
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
3
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
FLANGE MOUNT
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
167 W
|
100 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Rise Time-Max (tr) |
20 ns
|
|
| Surface Mount |
YES
|
NO
|
| Terminal Finish |
TIN LEAD
|
|
| Terminal Form |
GULL WING
|
THROUGH-HOLE
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Transistor Application |
MOTOR CONTROL
|
MOTOR CONTROL
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Turn-off Time-Nom (toff) |
357 ns
|
370 ns
|
| Turn-on Time-Nom (ton) |
35 ns
|
100 ns
|
| Base Number Matches |
2
|
2
|
| Factory Lead Time |
|
4 Weeks
|
| Samacsys Manufacturer |
|
Infineon
|
| Gate-Emitter Thr Voltage-Max |
|
6 V
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare HGT1S5N120BNS9A with alternatives
Compare IRG4BC30KDPBF with alternatives