HGT1S5N120BNS9A vs IRGBC30FD2 feature comparison

HGT1S5N120BNS9A Fairchild Semiconductor Corporation

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IRGBC30FD2 International Rectifier

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Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP INTERNATIONAL RECTIFIER CORP
Package Description SMALL OUTLINE, R-PSSO-G2 TO-220AB, 3 PIN
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Additional Feature LOW CONDUCTION LOSS, AVALANCHE RATED FAST
Case Connection COLLECTOR COLLECTOR
Collector Current-Max (IC) 21 A 31 A
Collector-Emitter Voltage-Max 1200 V 600 V
Configuration SINGLE SINGLE WITH BUILT-IN DIODE
Fall Time-Max (tf) 200 ns
Gate-Emitter Voltage-Max 20 V 20 V
JEDEC-95 Code TO-263AB TO-220AB
JESD-30 Code R-PSSO-G2 R-PSFM-T3
JESD-609 Code e0 e0
Number of Elements 1 1
Number of Terminals 2 3
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 167 W 100 W
Qualification Status Not Qualified Not Qualified
Rise Time-Max (tr) 20 ns
Surface Mount YES NO
Terminal Finish TIN LEAD TIN LEAD
Terminal Form GULL WING THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application MOTOR CONTROL POWER CONTROL
Transistor Element Material SILICON SILICON
Turn-off Time-Nom (toff) 357 ns 900 ns
Turn-on Time-Nom (ton) 35 ns 145 ns
Base Number Matches 2 1
Part Package Code TO-220AB
Pin Count 3
HTS Code 8541.29.00.95
Gate-Emitter Thr Voltage-Max 5.5 V
Power Dissipation Ambient-Max 100 W
VCEsat-Max 2.1 V

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