HGTG24N60D1 vs 1MB10-120 feature comparison

HGTG24N60D1 Harris Semiconductor

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1MB10-120 Fuji Electric Co Ltd

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Rohs Code No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer HARRIS SEMICONDUCTOR COLLMER SEMICONDUCTOR INC
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95
Case Connection COLLECTOR
Collector Current-Max (IC) 40 A 16 A
Collector-Emitter Voltage-Max 600 V 1200 V
Configuration SINGLE SINGLE
Fall Time-Max (tf) 600 ns
Gate-Emitter Thr Voltage-Max 6 V
Gate-Emitter Voltage-Max 25 V
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3 R-PSIP-T3
JESD-609 Code e0
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT IN-LINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation Ambient-Max 125 W
Power Dissipation-Max (Abs) 125 W
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON SILICON
Turn-off Time-Max (toff) 900 ns
Turn-off Time-Nom (toff) 700 ns 1500 ns
Turn-on Time-Nom (ton) 100 ns 1200 ns
VCEsat-Max 2.3 V
Base Number Matches 2 1
Part Package Code TO-3P
Package Description IN-LINE, R-PSIP-T3
Pin Count 2

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