HGTP12N60A4 vs HGTP11N120CN feature comparison

HGTP12N60A4 Intersil Corporation

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HGTP11N120CN Harris Semiconductor

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Rohs Code No
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer INTERSIL CORP HARRIS SEMICONDUCTOR
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
Additional Feature LOW CONDUCTION LOSS LOW CONDUCTION LOSS
Case Connection COLLECTOR COLLECTOR
Collector Current-Max (IC) 54 A 43 A
Collector-Emitter Voltage-Max 600 V 1200 V
Configuration SINGLE SINGLE
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-220AB TO-220AB
JESD-30 Code R-PSFM-T3 R-PSFM-T3
JESD-609 Code e0
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 167 W
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application MOTOR CONTROL MOTOR CONTROL
Transistor Element Material SILICON SILICON
Turn-off Time-Nom (toff) 180 ns 210 ns
Turn-on Time-Nom (ton) 33 ns 21 ns
Base Number Matches 4 4
Package Description FLANGE MOUNT, R-PSFM-T3

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