HM6116ASP-12
vs
U635H16BDC45G1
feature comparison
| Part Life Cycle Code |
Transferred
|
Transferred
|
| Ihs Manufacturer |
RENESAS ELECTRONICS CORP
|
ZENTRUM MIKROELEKTRONIK DRESDEN AG
|
| Part Package Code |
DIP
|
DIP
|
| Package Description |
DIP,
|
DIP, DIP24,.6
|
| Pin Count |
24
|
24
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8542.32.00.41
|
8542.32.00.41
|
| Access Time-Max |
120 ns
|
45 ns
|
| JESD-30 Code |
R-PDIP-T24
|
R-PDIP-T24
|
| Length |
30.4 mm
|
31.95 mm
|
| Memory Density |
16384 bit
|
16384 bit
|
| Memory IC Type |
STANDARD SRAM
|
NON-VOLATILE SRAM
|
| Memory Width |
8
|
8
|
| Number of Functions |
1
|
1
|
| Number of Terminals |
24
|
24
|
| Number of Words |
2048 words
|
2048 words
|
| Number of Words Code |
2000
|
2000
|
| Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
| Operating Temperature-Max |
70 °C
|
70 °C
|
| Operating Temperature-Min |
|
|
| Organization |
2KX8
|
2KX8
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Code |
DIP
|
DIP
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
IN-LINE
|
IN-LINE
|
| Parallel/Serial |
PARALLEL
|
PARALLEL
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Seated Height-Max |
5.08 mm
|
5.1 mm
|
| Supply Voltage-Max (Vsup) |
5.5 V
|
5.5 V
|
| Supply Voltage-Min (Vsup) |
4.5 V
|
4.5 V
|
| Supply Voltage-Nom (Vsup) |
5 V
|
5 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
COMMERCIAL
|
COMMERCIAL
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Pitch |
2.54 mm
|
2.54 mm
|
| Terminal Position |
DUAL
|
DUAL
|
| Width |
7.62 mm
|
15.24 mm
|
| Base Number Matches |
1
|
1
|
| Pbfree Code |
|
Yes
|
| Rohs Code |
|
Yes
|
| JESD-609 Code |
|
e3
|
| Moisture Sensitivity Level |
|
3
|
| Package Equivalence Code |
|
DIP24,.6
|
| Standby Current-Max |
|
0.003 A
|
| Supply Current-Max |
|
0.075 mA
|
| Terminal Finish |
|
MATTE TIN
|
|
|
|
Compare HM6116ASP-12 with alternatives
Compare U635H16BDC45G1 with alternatives