HM6264P-12 vs U635H64BDC45G1 feature comparison

HM6264P-12 Renesas Electronics Corporation

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U635H64BDC45G1 Cypress Semiconductor

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer RENESAS TECHNOLOGY CORP SIMTEK CORP
Part Package Code DIP DIP
Package Description DIP, DIP,
Pin Count 28 28
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.41 8542.32.00.41
Access Time-Max 120 ns 45 ns
JESD-30 Code R-PDIP-T28 R-PDIP-T28
Length 35.6 mm 34.7 mm
Memory Density 65536 bit 65536 bit
Memory IC Type STANDARD SRAM NON-VOLATILE SRAM
Memory Width 8 8
Number of Functions 1 1
Number of Terminals 28 28
Number of Words 8192 words 8192 words
Number of Words Code 8000 8000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 70 °C 70 °C
Operating Temperature-Min
Organization 8KX8 8KX8
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code DIP DIP
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Parallel/Serial PARALLEL PARALLEL
Qualification Status Not Qualified Not Qualified
Seated Height-Max 5.7 mm 5.1 mm
Supply Voltage-Max (Vsup) 5.5 V 5.5 V
Supply Voltage-Min (Vsup) 4.5 V 4.5 V
Supply Voltage-Nom (Vsup) 5 V 5 V
Surface Mount NO NO
Technology CMOS CMOS
Temperature Grade COMMERCIAL COMMERCIAL
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Pitch 2.54 mm 2.54 mm
Terminal Position DUAL DUAL
Width 15.24 mm 7.62 mm
Base Number Matches 2 3
Pbfree Code Yes
JESD-609 Code e3
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Finish MATTE TIN
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare HM6264P-12 with alternatives

Compare U635H64BDC45G1 with alternatives