HS3BBR5G vs FFM302-B-H feature comparison

HS3BBR5G Taiwan Semiconductor

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FFM302-B-H Formosa Microsemi Co Ltd

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Contact Manufacturer
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD FORMOSA MICROSEMI CO LTD
Package Description SMB, 2 PIN R-PDSO-F2
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Application EFFICIENCY EFFICIENCY
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1 V 1.3 V
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-F2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 100 A 100 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Output Current-Max 3 A 3 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 250
Rep Pk Reverse Voltage-Max 100 V 100 V
Reverse Current-Max 10 µA 5 µA
Reverse Recovery Time-Max 0.05 µs 0.15 µs
Surface Mount YES YES
Terminal Finish MATTE TIN
Terminal Form C BEND FLAT
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Base Number Matches 1 1

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