HSU83TRF-E vs BAS321,115 feature comparison

HSU83TRF-E Renesas Electronics Corporation

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BAS321,115 NXP Semiconductors

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer RENESAS TECHNOLOGY CORP NXP SEMICONDUCTORS
Package Description R-PDSO-G2 PLASTIC, SC-76, 2 PIN
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Samacsys Manufacturer Renesas Electronics
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
JESD-30 Code R-PDSO-G2 R-PDSO-G2
JESD-609 Code e6 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Output Current-Max 0.1 A 0.25 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Qualification Status Not Qualified Not Qualified
Reverse Recovery Time-Max 0.1 µs 0.05 µs
Surface Mount YES YES
Terminal Finish TIN BISMUTH TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Base Number Matches 1 2
Part Package Code SOD
Pin Count 2
Manufacturer Package Code SOD323
Forward Voltage-Max (VF) 1 V
Non-rep Pk Forward Current-Max 9 A
Operating Temperature-Max 150 °C
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max 0.3 W
Rep Pk Reverse Voltage-Max 250 V
Time@Peak Reflow Temperature-Max (s) 30

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