HUF75309D3ST vs STP20NE06L feature comparison

HUF75309D3ST Intersil Corporation

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STP20NE06L STMicroelectronics

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Rohs Code No Yes
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer INTERSIL CORP STMICROELECTRONICS
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V 60 V
Drain Current-Max (ID) 17 A 20 A
Drain-source On Resistance-Max 0.07 Ω 0.085 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA TO-220AB
JESD-30 Code R-PSSO-G2 R-PSFM-T3
Number of Elements 1 1
Number of Terminals 2 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation Ambient-Max 45 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES NO
Terminal Form GULL WING THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Turn-off Time-Max (toff) 80 ns
Turn-on Time-Max (ton) 70 ns
Base Number Matches 4 1
Part Package Code TO-220AB
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 100 mJ
JESD-609 Code e3
Peak Reflow Temperature (Cel) NOT SPECIFIED
Power Dissipation-Max (Abs) 70 W
Pulsed Drain Current-Max (IDM) 80 A
Terminal Finish Matte Tin (Sn)
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare HUF75309D3ST with alternatives

Compare STP20NE06L with alternatives