| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| RFD14N05 | Rochester Electronics LLC | Check for Price | 14A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA, TO-251AA, 3 PIN | STP20NE06L vs RFD14N05 |
| RFD14N05L | Intersil Corporation | Check for Price | Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | STP20NE06L vs RFD14N05L |
| RFP14N05L | Rochester Electronics LLC | Check for Price | 14A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN | STP20NE06L vs RFP14N05L |
| RFD14N06L | Intersil Corporation | Check for Price | Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | STP20NE06L vs RFD14N06L |
| RFP14N05L | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STP20NE06L vs RFP14N05L |
| RFD14N05L | onsemi | Check for Price | Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | STP20NE06L vs RFD14N05L |
| BUK553-60A | NXP Semiconductors | Check for Price | Power Field-Effect Transistor, 21A I(D), 60V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STP20NE06L vs BUK553-60A |
| RFD14N06L | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | STP20NE06L vs RFD14N06L |
| RFD14N05L | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | STP20NE06L vs RFD14N05L |
| RFD14N05L | Rochester Electronics LLC | Check for Price | 14A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA, TO-251, 3 PIN | STP20NE06L vs RFD14N05L |
Part Details for STP20NE06L by STMicroelectronics
Results Overview of STP20NE06L by STMicroelectronics
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (10 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (10 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
STP20NE06L Information
STP20NE06L by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STP20NE06L
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
497-2764-5-ND
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DigiKey | MOSFET N-CH 60V 20A TO220AB Min Qty: 2000 Container: Tube |
0 Tube |
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$0.4356 | Buy Now |
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Vyrian | Power Field-Effect Transistor, 20A I(D), 60V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 10452 |
|
RFQ |
STP20NE06L Part Data Attributes
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STP20NE06L
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STP20NE06L
STMicroelectronics
Power Field-Effect Transistor, 20A I(D), 60V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Part Package Code | TO-220AB | |
| Package Description | To-220, 3 Pin | |
| Pin Count | 3 | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 100 Mj | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 20 A | |
| Drain-source On Resistance-Max | 0.085 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 40 Pf | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 70 W | |
| Pulsed Drain Current-Max (IDM) | 80 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | No | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for STP20NE06L
This table gives cross-reference parts and alternative options found for STP20NE06L. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STP20NE06L, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
STP20NE06L Frequently Asked Questions (FAQ)
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The maximum operating frequency of the STP20NE06L is 100 kHz, but it can be operated at higher frequencies with reduced performance.
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To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V and 4V, and the drain-source voltage (Vds) should be between 10V and 20V, depending on the application.
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The maximum power dissipation of the STP20NE06L is 2.5W, and it is recommended to use a heat sink to ensure reliable operation.
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Yes, the STP20NE06L can be used in high-temperature applications up to 150°C, but the maximum operating temperature should be derated according to the datasheet.
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To protect the STP20NE06L from ESD, it is recommended to use ESD protection devices, such as TVS diodes, and follow proper handling and storage procedures.