HUF75321D3S vs BUZ11A feature comparison

HUF75321D3S Harris Semiconductor

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BUZ11A STMicroelectronics

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Rohs Code No Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer HARRIS SEMICONDUCTOR STMICROELECTRONICS
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
Configuration SINGLE SINGLE WITH BUILT-IN DIODE
Drain Current-Max (ID) 20 A 26 A
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA TO-220AB
JESD-30 Code R-PSSO-G2 R-PSFM-T3
JESD-609 Code e0 e3
Number of Elements 1 1
Number of Terminals 2 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 55 W 75 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES NO
Terminal Finish TIN LEAD MATTE TIN
Terminal Form GULL WING THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 2
Part Package Code TO-220AB
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
HTS Code 8541.29.00.95
Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 120 mJ
DS Breakdown Voltage-Min 50 V
Drain-source On Resistance-Max 0.055 Ω
Feedback Cap-Max (Crss) 200 pF
Power Dissipation Ambient-Max 95 W
Pulsed Drain Current-Max (IDM) 104 A
Turn-off Time-Max (toff) 450 ns
Turn-on Time-Max (ton) 175 ns

Compare HUF75321D3S with alternatives

Compare BUZ11A with alternatives