HUF75329P3
vs
IRFZ46NPBF
feature comparison
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Obsolete
|
Not Recommended
|
Ihs Manufacturer |
FAIRCHILD SEMICONDUCTOR CORP
|
INFINEON TECHNOLOGIES AG
|
Reach Compliance Code |
compliant
|
not_compliant
|
ECCN Code |
EAR99
|
EAR99
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
55 V
|
55 V
|
Drain Current-Max (ID) |
49 A
|
39 A
|
Drain-source On Resistance-Max |
0.024 Ω
|
0.0165 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-220AB
|
TO-220AB
|
JESD-30 Code |
R-PSFM-T3
|
R-PSFM-T3
|
JESD-609 Code |
e3
|
e3
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
175 °C
|
175 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
128 W
|
107 W
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
NO
|
NO
|
Terminal Finish |
MATTE TIN
|
Tin (Sn)
|
Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
Terminal Position |
SINGLE
|
SINGLE
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
2
|
1
|
Package Description |
|
TO-220AB, 3 PIN
|
HTS Code |
|
8541.29.00.95
|
Factory Lead Time |
|
4 Weeks
|
Samacsys Manufacturer |
|
Infineon
|
Additional Feature |
|
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
|
Avalanche Energy Rating (Eas) |
|
152 mJ
|
Operating Temperature-Min |
|
-55 °C
|
Peak Reflow Temperature (Cel) |
|
260
|
Power Dissipation Ambient-Max |
|
88 W
|
Pulsed Drain Current-Max (IDM) |
|
180 A
|
Time@Peak Reflow Temperature-Max (s) |
|
10
|
|
|
|
Compare HUF75329P3 with alternatives
Compare IRFZ46NPBF with alternatives