HUF76105DK8T vs MMDF3N03HDR2 feature comparison

HUF76105DK8T Intersil Corporation

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MMDF3N03HDR2 Motorola Semiconductor Products

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Rohs Code No No
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer INTERSIL CORP MOTOROLA INC
Part Package Code SOIC
Package Description PLASTIC, SO-8 SMALL OUTLINE, R-PDSO-G8
Pin Count 8
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS
DS Breakdown Voltage-Min 30 V 30 V
Drain Current-Max (ID) 5 A 2.8 A
Drain-source On Resistance-Max 0.072 Ω 0.09 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8 R-PDSO-G8
JESD-609 Code e0 e0
Number of Elements 2 2
Number of Terminals 8 8
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 2.5 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 4 5
Avalanche Energy Rating (Eas) 324 mJ
Pulsed Drain Current-Max (IDM) 40 A

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