HUF76105DK8T
vs
MMDF3N03HDR2
feature comparison
All Stats
Differences Only
Rohs Code
No
No
Part Life Cycle Code
Transferred
Transferred
Ihs Manufacturer
INTERSIL CORP
MOTOROLA INC
Part Package Code
SOIC
Package Description
PLASTIC, SO-8
SMALL OUTLINE, R-PDSO-G8
Pin Count
8
Reach Compliance Code
not_compliant
unknown
ECCN Code
EAR99
EAR99
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
SEPARATE, 2 ELEMENTS
DS Breakdown Voltage-Min
30 V
30 V
Drain Current-Max (ID)
5 A
2.8 A
Drain-source On Resistance-Max
0.072 Ω
0.09 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
MS-012AA
JESD-30 Code
R-PDSO-G8
R-PDSO-G8
JESD-609 Code
e0
e0
Number of Elements
2
2
Number of Terminals
8
8
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
2.5 W
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
Tin/Lead (Sn/Pb)
Tin/Lead (Sn/Pb)
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
4
5
Avalanche Energy Rating (Eas)
324 mJ
Pulsed Drain Current-Max (IDM)
40 A
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