HUFA76413DK8
vs
SI9945AEY-T1-E3
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
ROCHESTER ELECTRONICS LLC
VISHAY SILICONIX
Part Package Code
SOT
SOT
Package Description
SO-8
SMALL OUTLINE, R-PDSO-G8
Pin Count
8
8
Reach Compliance Code
unknown
compliant
Avalanche Energy Rating (Eas)
260 mJ
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
60 V
60 V
Drain Current-Max (ID)
5.1 A
3.7 A
Drain-source On Resistance-Max
0.049 Ω
0.08 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-G8
R-PDSO-G8
Number of Elements
2
2
Number of Terminals
8
8
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Qualification Status
COMMERCIAL
Not Qualified
Surface Mount
YES
YES
Terminal Finish
NOT SPECIFIED
MATTE TIN
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Transistor Application
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
2
Rohs Code
ECCN Code
EAR99
JESD-609 Code
e3
Moisture Sensitivity Level
1
Pulsed Drain Current-Max (IDM)
25 A
Compare HUFA76413DK8 with alternatives
Compare SI9945AEY-T1-E3 with alternatives