IDT71V3559S85BQI
vs
71V3559S85BQGI
feature comparison
| Pbfree Code |
No
|
Yes
|
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Transferred
|
Transferred
|
| Ihs Manufacturer |
INTEGRATED DEVICE TECHNOLOGY INC
|
INTEGRATED DEVICE TECHNOLOGY INC
|
| Part Package Code |
BGA
|
BGA
|
| Package Description |
TBGA, BGA165,11X15,40
|
TBGA, BGA165,11X15,40
|
| Pin Count |
165
|
165
|
| Reach Compliance Code |
not_compliant
|
compliant
|
| ECCN Code |
3A991.B.2.A
|
3A991.B.2.A
|
| HTS Code |
8542.32.00.41
|
8542.32.00.41
|
| Date Of Intro |
1998-08-01
|
|
| Access Time-Max |
8.5 ns
|
8.5 ns
|
| Additional Feature |
FLOW-THROUGH ARCHITECTURE
|
FLOW-THROUGH ARCHITECHTURE
|
| Clock Frequency-Max (fCLK) |
90 MHz
|
90 MHz
|
| I/O Type |
COMMON
|
COMMON
|
| JESD-30 Code |
R-PBGA-B165
|
R-PBGA-B165
|
| JESD-609 Code |
e0
|
e1
|
| Length |
15 mm
|
15 mm
|
| Memory Density |
4718592 bit
|
4718592 bit
|
| Memory IC Type |
ZBT SRAM
|
CACHE SRAM
|
| Memory Width |
18
|
18
|
| Moisture Sensitivity Level |
3
|
3
|
| Number of Functions |
1
|
1
|
| Number of Terminals |
165
|
165
|
| Number of Words |
262144 words
|
262144 words
|
| Number of Words Code |
256000
|
256000
|
| Operating Mode |
SYNCHRONOUS
|
SYNCHRONOUS
|
| Operating Temperature-Max |
85 °C
|
85 °C
|
| Operating Temperature-Min |
-40 °C
|
-40 °C
|
| Organization |
256KX18
|
256KX18
|
| Output Characteristics |
3-STATE
|
3-STATE
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Code |
TBGA
|
TBGA
|
| Package Equivalence Code |
BGA165,11X15,40
|
BGA165,11X15,40
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
GRID ARRAY, THIN PROFILE
|
GRID ARRAY, THIN PROFILE
|
| Parallel/Serial |
PARALLEL
|
PARALLEL
|
| Peak Reflow Temperature (Cel) |
225
|
260
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Seated Height-Max |
1.2 mm
|
1.2 mm
|
| Standby Current-Max |
0.045 A
|
0.045 A
|
| Standby Voltage-Min |
3.14 V
|
3.14 V
|
| Supply Current-Max |
0.235 mA
|
0.235 mA
|
| Supply Voltage-Max (Vsup) |
3.465 V
|
3.465 V
|
| Supply Voltage-Min (Vsup) |
3.135 V
|
3.135 V
|
| Supply Voltage-Nom (Vsup) |
3.3 V
|
3.3 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
INDUSTRIAL
|
INDUSTRIAL
|
| Terminal Finish |
TIN LEAD
|
Tin/Silver/Copper (Sn/Ag/Cu)
|
| Terminal Form |
BALL
|
BALL
|
| Terminal Pitch |
1 mm
|
1 mm
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
30
|
| Width |
13 mm
|
13 mm
|
| Base Number Matches |
1
|
3
|
| Alternate Memory Width |
|
18
|
|
|
|
Compare IDT71V3559S85BQI with alternatives
Compare 71V3559S85BQGI with alternatives