IPB60R125C6ATMA1 vs SIHG30N60AEL-GE3 feature comparison

IPB60R125C6ATMA1 Infineon Technologies AG

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SIHG30N60AEL-GE3 Vishay Intertechnologies

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Pbfree Code No
Rohs Code Yes Yes
Part Life Cycle Code Not Recommended Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG VISHAY INTERTECHNOLOGY INC
Part Package Code D2PAK
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 4
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
Factory Lead Time 16 Weeks, 3 Days
Samacsys Manufacturer Infineon Vishay
Avalanche Energy Rating (Eas) 636 mJ 353 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V 600 V
Drain Current-Max (ID) 30 A 28 A
Drain-source On Resistance-Max 0.125 Ω 0.12 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB TO-247AC
JESD-30 Code R-PSSO-G2 R-PSFM-T3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 89 A 68 A
Qualification Status Not Qualified
Surface Mount YES NO
Terminal Finish Tin (Sn)
Terminal Form GULL WING THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Feedback Cap-Max (Crss) 6 pF
Operating Temperature-Min -55 °C
Power Dissipation-Max (Abs) 250 W
Turn-off Time-Max (toff) 224 ns
Turn-on Time-Max (ton) 100 ns

Compare IPB60R125C6ATMA1 with alternatives

Compare SIHG30N60AEL-GE3 with alternatives