IPD30N08S2L-21 vs IPD30N08S2L21ATMA1 feature comparison

IPD30N08S2L-21 Infineon Technologies AG

Buy Now Datasheet

IPD30N08S2L21ATMA1 Infineon Technologies AG

Buy Now Datasheet
Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG INFINEON TECHNOLOGIES AG
Part Package Code TO-252AA
Package Description SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Pin Count 4
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer Infineon Infineon
Additional Feature LOGIC LEVEL COMPATIBLE ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas) 240 mJ 240 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 75 V 75 V
Drain Current-Max (ID) 30 A 30 A
Drain-source On Resistance-Max 0.026 Ω 0.026 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA TO-252
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 136 W
Pulsed Drain Current-Max (IDM) 120 A 120 A
Qualification Status Not Qualified
Surface Mount YES YES
Terminal Finish Tin (Sn) Tin (Sn)
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Transistor Element Material SILICON SILICON
Base Number Matches 3 1
Factory Lead Time 4 Weeks
Reference Standard AEC-Q101

Compare IPD30N08S2L-21 with alternatives

Compare IPD30N08S2L21ATMA1 with alternatives