IPD50P04P4L11ATMA1 vs NP50P04SLG-E2-AY feature comparison

IPD50P04P4L11ATMA1 Infineon Technologies AG

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NP50P04SLG-E2-AY Renesas Electronics Corporation

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Rohs Code Yes Yes
Part Life Cycle Code Not Recommended End Of Life
Ihs Manufacturer INFINEON TECHNOLOGIES AG RENESAS ELECTRONICS CORP
Package Description GREEN, PLASTIC PACKAGE-3/2 SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 18 mJ 136 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V 40 V
Drain Current-Max (ID) 50 A 50 A
Drain-source On Resistance-Max 0.0106 Ω 0.015 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252 TO-252
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Polarity/Channel Type P-CHANNEL P-CHANNEL
Pulsed Drain Current-Max (IDM) 200 A 150 A
Reference Standard AEC-Q101
Surface Mount YES YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Pbfree Code Yes
Part Package Code TO-252
Pin Count 4
Operating Temperature-Max 175 °C
Power Dissipation-Max (Abs) 84 W
Transistor Application SWITCHING

Compare IPD50P04P4L11ATMA1 with alternatives

Compare NP50P04SLG-E2-AY with alternatives