IPW60R099C6FKSA1 vs R6035ENZ1C9 feature comparison

IPW60R099C6FKSA1 Infineon Technologies AG

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R6035ENZ1C9 ROHM Semiconductor

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Not Recommended Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG ROHM CO LTD
Part Package Code TO-247
Package Description GREEN, PLASTIC PACKAGE-3 FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer Infineon ROHM Semiconductor
Avalanche Energy Rating (Eas) 796 mJ 796 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V 600 V
Drain Current-Max (ID) 37.9 A 35 A
Drain-source On Resistance-Max 0.099 Ω 0.102 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247 TO-247
JESD-30 Code R-PSFM-T3 R-PSFM-T3
JESD-609 Code e3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 112 A 105 A
Qualification Status Not Qualified
Surface Mount NO NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 10
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Moisture Sensitivity Level 1

Compare IPW60R099C6FKSA1 with alternatives

Compare R6035ENZ1C9 with alternatives