IPW65R080CFDAFKSA1 vs IXKH35N60C5 feature comparison

IPW65R080CFDAFKSA1 Infineon Technologies AG

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IXKH35N60C5 IXYS Corporation

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Pbfree Code Yes Yes
Rohs Code Yes Yes
Part Life Cycle Code Active Transferred
Ihs Manufacturer INFINEON TECHNOLOGIES AG IXYS CORP
Part Package Code TO-247 TO-247AD
Package Description GREEN, PLASTIC PACKAGE-3 TO-247AD, 3 PIN
Pin Count 3 3
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer Infineon
Additional Feature HIGH RELIABILITY AVALANCHE RATED
Avalanche Energy Rating (Eas) 1160 mJ 800 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 650 V 600 V
Drain Current-Max (ID) 43.3 A 35 A
Drain-source On Resistance-Max 0.08 Ω 0.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247 TO-247AD
JESD-30 Code R-PSFM-T3 R-PSFM-T3
JESD-609 Code e3 e3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 137 A
Reference Standard AEC-Q101
Surface Mount NO NO
Terminal Finish Tin (Sn) Matte Tin (Sn)
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 10
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 2
Case Connection DRAIN
Operating Temperature-Max 150 °C
Qualification Status Not Qualified

Compare IPW65R080CFDAFKSA1 with alternatives

Compare IXKH35N60C5 with alternatives