IRF1010NSPBF vs PSMN025-100D/T3 feature comparison

IRF1010NSPBF International Rectifier

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PSMN025-100D/T3 Nexperia

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP NEXPERIA
Part Package Code D2PAK
Package Description LEAD FREE, PLASTIC, D2PAK-3 SMALL OUTLINE, R-PSSO-G2
Pin Count 3
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Avalanche Energy Rating (Eas) 250 mJ 260 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V 100 V
Drain Current-Max (ID) 75 A 47 A
Drain-source On Resistance-Max 0.011 Ω 0.025 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 170 W
Pulsed Drain Current-Max (IDM) 290 A 188 A
Qualification Status Not Qualified
Surface Mount YES YES
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier TIN
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 30 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 2
Date Of Intro 2017-02-01

Compare IRF1010NSPBF with alternatives

Compare PSMN025-100D/T3 with alternatives