IRF6644PBF
vs
IRF6644TRPBF
feature comparison
Pbfree Code |
Yes
|
|
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Transferred
|
Active
|
Ihs Manufacturer |
INTERNATIONAL RECTIFIER CORP
|
INFINEON TECHNOLOGIES AG
|
Package Description |
CHIP CARRIER, R-XBCC-N3
|
|
Pin Count |
3
|
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Avalanche Energy Rating (Eas) |
220 mJ
|
86 mJ
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
100 V
|
100 V
|
Drain Current-Max (ID) |
10.3 A
|
10 A
|
Drain-source On Resistance-Max |
0.013 Ω
|
0.013 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-XBCC-N3
|
R-XBCC-N3
|
JESD-609 Code |
e4
|
e1
|
Moisture Sensitivity Level |
3
|
1
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
UNSPECIFIED
|
UNSPECIFIED
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
CHIP CARRIER
|
CHIP CARRIER
|
Peak Reflow Temperature (Cel) |
260
|
260
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
89 W
|
89 W
|
Pulsed Drain Current-Max (IDM) |
82 A
|
228 A
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
Silver/Nickel (Ag/Ni)
|
Tin/Silver/Copper (Sn/Ag/Cu)
|
Terminal Form |
NO LEAD
|
NO LEAD
|
Terminal Position |
BOTTOM
|
BOTTOM
|
Time@Peak Reflow Temperature-Max (s) |
30
|
30
|
Transistor Application |
SWITCHING
|
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
HTS Code |
|
8541.29.00.95
|
Factory Lead Time |
|
4 Weeks
|
Samacsys Manufacturer |
|
Infineon
|
Additional Feature |
|
LOW CONDUCTION LOSS
|
Operating Temperature-Min |
|
-40 °C
|
Power Dissipation Ambient-Max |
|
2.8 W
|
|
|
|
Compare IRF6644PBF with alternatives
Compare IRF6644TRPBF with alternatives