IRF7304TRPBF vs IRF7304PBF feature comparison

IRF7304TRPBF Infineon Technologies AG

Buy Now Datasheet

IRF7304PBF Infineon Technologies AG

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Factory Lead Time 52 Weeks
Samacsys Manufacturer Infineon Infineon
Additional Feature LOGIC LEVEL COMPATIBLE LOGIC LEVEL COMPATIBLE
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V 20 V
Drain Current-Max (ID) 3.6 A 4.3 A
Drain-source On Resistance-Max 0.09 Ω 0.09 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8 R-PDSO-G8
Moisture Sensitivity Level 1 1
Number of Elements 2 2
Number of Terminals 8 8
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Polarity/Channel Type P-CHANNEL P-CHANNEL
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Transistor Element Material SILICON SILICON
Base Number Matches 2 2
JEDEC-95 Code MS-012AA
JESD-609 Code e3
Operating Temperature-Max 150 °C
Power Dissipation-Max (Abs) 1.4 W
Pulsed Drain Current-Max (IDM) 17 A
Qualification Status Not Qualified
Terminal Finish Matte Tin (Sn)

Compare IRF7304TRPBF with alternatives

Compare IRF7304PBF with alternatives