IRF7406TRPBF vs MMDF2N02E feature comparison

IRF7406TRPBF Infineon Technologies AG

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MMDF2N02E Freescale Semiconductor

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Rohs Code Yes No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG MOTOROLA SEMICONDUCTOR PRODUCTS
Package Description SMALL OUTLINE, R-PDSO-G8 SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code compliant unknown
ECCN Code EAR99
Factory Lead Time 52 Weeks
Samacsys Manufacturer Infineon
Additional Feature ULTRA LOW RESISTANCE LOGIC LEVEL COMPATIBLE
Configuration SINGLE WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V 25 V
Drain Current-Max (ID) 5.8 A 3.6 A
Drain-source On Resistance-Max 0.045 Ω 0.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8 R-PDSO-G8
JESD-609 Code e3 e0
Moisture Sensitivity Level 1
Number of Elements 1 2
Number of Terminals 8 8
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Polarity/Channel Type P-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 23 A 18 A
Surface Mount YES YES
Terminal Finish Matte Tin (Sn) Tin/Lead (Sn/Pb)
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 4
Avalanche Energy Rating (Eas) 245 mJ
Drain Current-Max (Abs) (ID) 2.2 A
Power Dissipation-Max (Abs) 1.5 W
Qualification Status Not Qualified
Turn-off Time-Max (toff) 140 ns
Turn-on Time-Max (ton) 40 ns

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