IRF7509PBF
vs
NDS9942
feature comparison
Pbfree Code |
Yes
|
No
|
Rohs Code |
Yes
|
No
|
Part Life Cycle Code |
Transferred
|
Obsolete
|
Ihs Manufacturer |
INTERNATIONAL RECTIFIER CORP
|
NATIONAL SEMICONDUCTOR CORP
|
Part Package Code |
SOT
|
|
Package Description |
SMALL OUTLINE, S-PDSO-G8
|
SMALL OUTLINE, R-PDSO-G8
|
Pin Count |
8
|
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Additional Feature |
ULTRA LOW RESISTANCE
|
|
Configuration |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
|
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
30 V
|
20 V
|
Drain Current-Max (ID) |
2.7 A
|
3 A
|
Drain-source On Resistance-Max |
0.11 Ω
|
0.125 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
S-PDSO-G8
|
R-PDSO-G8
|
JESD-609 Code |
e3
|
e0
|
Moisture Sensitivity Level |
1
|
|
Number of Elements |
2
|
2
|
Number of Terminals |
8
|
8
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Operating Temperature-Min |
-55 °C
|
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
SQUARE
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
260
|
|
Polarity/Channel Type |
N-CHANNEL AND P-CHANNEL
|
N-CHANNEL AND P-CHANNEL
|
Power Dissipation-Max (Abs) |
0.39 W
|
2 W
|
Pulsed Drain Current-Max (IDM) |
21 A
|
10 A
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
MATTE TIN
|
TIN LEAD
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
DUAL
|
DUAL
|
Time@Peak Reflow Temperature-Max (s) |
30
|
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
2
|
6
|
Turn-off Time-Max (toff) |
|
100 ns
|
Turn-on Time-Max (ton) |
|
35 ns
|
|
|
|
Compare IRF7509PBF with alternatives
Compare NDS9942 with alternatives