IRF830BPBF
vs
2N7290H1
feature comparison
Part Life Cycle Code |
End Of Life
|
Obsolete
|
Ihs Manufacturer |
VISHAY SILICONIX
|
HARRIS SEMICONDUCTOR
|
Package Description |
FLANGE MOUNT, R-PSFM-T3
|
FLANGE MOUNT, R-MSFM-P3
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Samacsys Manufacturer |
Vishay
|
|
Avalanche Energy Rating (Eas) |
28.8 mJ
|
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
500 V
|
500 V
|
Drain Current-Max (ID) |
5.3 A
|
5 A
|
Drain-source On Resistance-Max |
1.5 Ω
|
1.42 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
Feedback Cap-Max (Crss) |
6 pF
|
|
JEDEC-95 Code |
TO-220AB
|
TO-257AA
|
JESD-30 Code |
R-PSFM-T3
|
R-MSFM-P3
|
JESD-609 Code |
e3
|
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
|
Operating Temperature-Min |
-55 °C
|
|
Package Body Material |
PLASTIC/EPOXY
|
METAL
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
104 W
|
|
Pulsed Drain Current-Max (IDM) |
10 A
|
15 A
|
Surface Mount |
NO
|
NO
|
Terminal Finish |
MATTE TIN OVER NICKEL
|
|
Terminal Form |
THROUGH-HOLE
|
PIN/PEG
|
Terminal Position |
SINGLE
|
SINGLE
|
Transistor Application |
SWITCHING
|
|
Transistor Element Material |
SILICON
|
SILICON
|
Turn-off Time-Max (toff) |
50 ns
|
|
Turn-on Time-Max (ton) |
46 ns
|
|
Base Number Matches |
2
|
2
|
Additional Feature |
|
RADIATION HARDENED
|
Qualification Status |
|
Not Qualified
|
|
|
|
Compare IRF830BPBF with alternatives
Compare 2N7290H1 with alternatives