IRF830BPBF
vs
5N50G-TN3-R
feature comparison
Part Life Cycle Code |
End Of Life
|
Active
|
Ihs Manufacturer |
VISHAY SILICONIX
|
UNISONIC TECHNOLOGIES CO LTD
|
Package Description |
FLANGE MOUNT, R-PSFM-T3
|
SMALL OUTLINE, R-PSSO-G2
|
Reach Compliance Code |
unknown
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Samacsys Manufacturer |
Vishay
|
|
Avalanche Energy Rating (Eas) |
28.8 mJ
|
300 mJ
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
500 V
|
500 V
|
Drain Current-Max (ID) |
5.3 A
|
5 A
|
Drain-source On Resistance-Max |
1.5 Ω
|
1.4 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
Feedback Cap-Max (Crss) |
6 pF
|
|
JEDEC-95 Code |
TO-220AB
|
TO-252
|
JESD-30 Code |
R-PSFM-T3
|
R-PSSO-G2
|
JESD-609 Code |
e3
|
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
2
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
|
Operating Temperature-Min |
-55 °C
|
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
FLANGE MOUNT
|
SMALL OUTLINE
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
104 W
|
|
Pulsed Drain Current-Max (IDM) |
10 A
|
20 A
|
Surface Mount |
NO
|
YES
|
Terminal Finish |
MATTE TIN OVER NICKEL
|
|
Terminal Form |
THROUGH-HOLE
|
GULL WING
|
Terminal Position |
SINGLE
|
SINGLE
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Turn-off Time-Max (toff) |
50 ns
|
|
Turn-on Time-Max (ton) |
46 ns
|
|
Base Number Matches |
2
|
1
|
Rohs Code |
|
Yes
|
Part Package Code |
|
TO-252
|
Pin Count |
|
4
|
Case Connection |
|
DRAIN
|
Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare IRF830BPBF with alternatives
Compare 5N50G-TN3-R with alternatives