IRFD123PBF
vs
IRFD123
feature comparison
| Rohs Code |
Yes
|
No
|
| Part Life Cycle Code |
Active
|
Transferred
|
| Ihs Manufacturer |
VISHAY INTERTECHNOLOGY INC
|
SILICONIX INC
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Factory Lead Time |
18 Weeks, 1 Day
|
|
| Samacsys Manufacturer |
Vishay
|
Vishay
|
| Additional Feature |
AVALANCHE RATED
|
|
| Avalanche Energy Rating (Eas) |
100 mJ
|
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE
|
| DS Breakdown Voltage-Min |
100 V
|
|
| Drain Current-Max (ID) |
1.3 A
|
1.1 A
|
| Drain-source On Resistance-Max |
0.27 Ω
|
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-PDIP-T4
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
4
|
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
175 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
IN-LINE
|
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
1.3 W
|
1 W
|
| Pulsed Drain Current-Max (IDM) |
10 A
|
|
| Qualification Status |
Not Qualified
|
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
THROUGH-HOLE
|
|
| Terminal Position |
DUAL
|
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
|
| Base Number Matches |
1
|
2
|
| Pbfree Code |
|
No
|
| Part Package Code |
|
DIP
|
| Pin Count |
|
4
|
| JESD-609 Code |
|
e0
|
| Terminal Finish |
|
Tin/Lead (Sn/Pb)
|
|
|
|